Three-layered stacked magnetic spin polarisation device with memory, using such a device

摘要

Three-layered stacked magnetic spin polarisation device with memory, using such a device. According to the invention, the device includes a three-layered stack (16) which constitutes the free magnetic layer. This triple layer consists of two magnetic layers (161, 163) separated by a non-magnetic conducting layer (162). This stack does not include a demagnetising field, which reduces the critical writing density. The trapped layer may, itself, consist of a triple layer (12). Application in the manufacture of magnetic memories.