Verfahren zur Herstellung eines Substrats für die Fabrikation von Halbleitervorrichtungen aus Silizium

摘要

One or a plurality of silicon growth layers (12) are formed on both sides of a silicon base substrate wafer (11) and the product is then divided, with the dividing plane (A) in said silicon base substrate wafer (11) parallel to the main surface, into two pieces to obtain two substrates used for manufacturing silicon semiconductor elements. Said dividing-in-half process is a process in which said silicon base substrate wafer portion is cut along a plane parallel to the main surface, or a process which includes said cutting process followed by a process of treating the cut-surface. Said process which cuts the silicon base substrate wafer portion is a process in which the wafers are cut one by one, or cut after a plurality of them are laminated.