发明名称 |
INTEGRATED CIRCUIT AND METHOD FOR MAKING SAME |
摘要 |
In one particular embodiment, the integrated circuit comprises a load storing semiconductor device comprising at least a control transistor T and a storage capacitor TRC. The device comprises a substrate including a lower region containing at least a buried capacitive trench TRC forming said storage capacitor, a casing CS located above said lower region of the substrate. The control transistor T is produced in and on the casing and said capacitive trench is located beneath the transistor and is in contact with the casing.
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申请公布号 |
WO02056370(A8) |
申请公布日期 |
2002.08.08 |
申请号 |
WO2002FR00054 |
申请日期 |
2002.01.09 |
申请人 |
STMICROELECTRONICS SA;MENUT, OLIVIER;GRIS, YVON |
发明人 |
MENUT, OLIVIER;GRIS, YVON |
分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L27/146 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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