METAL-TO-METAL ANTIFUSE STRUCTURE AND FABRICATION METHOD

摘要

A metal-to-metal antifuse according to the present invention is compatible with a Cu dual damascene process and is formed over a lower Cu metal plarized with the top suface of a lowering insulating layer. A lower barrier layer is disposed over the lower Cu metal layer is disposed over the antifuse material layer. An upper insulating layer is disposed over the upper barrier layer. An upper Cu metal layer is planarized with the top suface of the upper insulating layer and extends therethrought to make electrical contact with the upper barrier layer.