| 摘要 |
PURPOSE:To suppress reactive current and to improve laser efficiency and temperature characteristics, by growing an InP layer on an InP substrate through a semiconductor layer comprising InGaAsP or InGaAs, forming a mesa structure from the two layers through a mask, and forming a reverse P-N junction in a region, which is not covered with the mask by etching. CONSTITUTION:On the (100) surface of an N-type InP substrate 1, an N-type confining layer 2, a non-doped InGaAsP active layer 3, and a P-type InP confining layer 4 are epitaxially grown. A stripe shaped mask 5 is provided in the <011> direction on the layer 4. A mesa structure is formed by etching. With the layer 3 being made to remain at the outside, a P-type InP layer 6 and an N-type InP layer 7 are epitaxially grown, and the mesa structure is buried. Then, the mask 5 is removed, and a P<+> type InGaAsP layer 8 is formed. A P-side electrode 9 and an N-side electrode 10 are formed on the semiconductor substrate. Cleavage is carried out, and the laser element is obtained.
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