ELECTRON BEAM APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING THE APPARATUS

摘要

An electron beam apparatus for evaluating a sample face which comprises a primary electro-optical system irradiating the sample with primary electron beams, a detection system, and a secondary electro-optical system directing the secondary electron beam generated from the sample face by irradiation with the primary electron beam to the detection system. The electron beam apparatus is characterized by comprising a multi-beam generator included in the primary electro-optical system to generate electrons emitted from an electron gun as primary electron beams, a scanning deflector included in the primary electro-optical system to scan the sample simultaneously with the primary electron beams, an objective lens included in common in the primary electro-optical system and the secondary electro-optical system to irradiate the sample with decelerated primary electron beams and to accelerate the secondary electron beams emitted from the irradiated point on the sample with the primary electron beams, a secondary electron beam separator included in the primary and secondary electro-optical systems to deflect the secondary electron beams passing through the objective lens from the primary electro-optical system to the secondary electro- optical system, a magnifying lens of at least one stage included in the secondary electro-optical lens to magnify the deflected secondary electron beams, and detectors included in the detection system and provided in accordance with the secondary electron beams for the secondary electro-optical system to detect secondary electron beams.