发明名称 |
AREA EFFICIENT STACKING OF ANTIFUSES IN SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device is provided which is formed of a wafer (101) having on a surface thereof an area efficient arrangement of at least two antifuses (121, 122) in vertically stacked relation and sharing a common intermediate electrode (123) therebetween. The arrangement includes at least one lower antifuse (121) having a lower counter electrode (125) and a lower fusible insulator portion (124) defining a lower fuse element of an initial high electrical resistance state which interconnects the lower counter electrode (125) with the common intermediate electrode (123), and at least one upper antifuse (122), the upper antifuse (122) having an upper counter electrode (127) and an upper fusible insulator portion (126) defining an upper fuse element of an initial high electrical resistance state which interconnects the upper counter electrode (127) with the common intermediate electrode (123). |
申请公布号 |
WO02061826(A2) |
申请公布日期 |
2002.08.08 |
申请号 |
WO2001US48819 |
申请日期 |
2001.12.17 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
LEHMANN, GUNTHER;BRINTZENGER, AXEL;DANIEL, GABRIEL |
分类号 |
H01L23/525 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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