POST-EPITAXIAL THERMAL OXIDATION FOR REDUCING MICROSTEPS ON POLISHED SEMICONDUCTOR WAFERSOST EPITAXIAL THERMAL OXIDATION

摘要

Disclosed is a system and method for handling post epitaxial thermal oxidation. The method produces semiconductor wafers by performing the steps of forming a wafer substrate, depositing an epilayer on the substrate, oxidizing a top portion of the epilayer, and removing the oxidized top portion. As a result, the wafer's surface is very smooth, with little or no micro-steps thereon.