HEAT TREATMENT APPARATUS AND WAFER SUPPORT RING

摘要

A heat treatment apparatus rapidly and uniformly heats an entire surface of a silicon wafer so as to apply a heat treatment to the silicon wafer. A wafer support ring supports the silicon wafer during the heat treatment. The wafer support ring is formed of silicon carbide having a vacancy rate of 5% to 20% on a density basis. Alternatively, the wafer support ring may be formed of a ceramics matrix composite material, or may be formed of silicon carbide containing an impurity added by a concentration ratio of 10<-7> to 10<-4>.