发明名称 Semiconductor device and process for manufacturing the same
摘要 An object of the present invention is to suppress a layer-peeling phenomenon in a semiconductor device comprising at least a ferroelectric layer and an upper electrode formed thereon while maintaining the electrical properties of the ferroelectric layer. The semiconductor device of the present invention is characterized in that an upper electrode and a ferroelectric layer have a convex region. By this constitution, a layer peeling can be suppressed. In the present invention, one convex region is formed on one layer, but a plurality of convex regions may be formed on one layer. Alternatively, a concave region may be formed in place of the convex region.
申请公布号 US2002105018(A1) 申请公布日期 2002.08.08
申请号 US20020055896 申请日期 2002.01.28
申请人 TOHDA TOSHIYUKI 发明人 TOHDA TOSHIYUKI
分类号 H01L27/105;H01L21/02;H01L21/8242;H01L21/8246;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 主分类号 H01L27/105
代理机构 代理人
主权项
地址