发明名称 |
Method for surface area enhancement of capacitors by film growth and self masking |
摘要 |
A method and structure for a fabricating roughened surface walls of a capacitor, such as a deep trench capacitor. The invention starts with a silicon surface and forms silicon germanium grains on the silicon surface. A portion of the silicon surface remains exposed and is etched selective to the silicon germanium grains. The silicon germanium grains are then removed from the silicon surface. The silicon surface is doped after the silicon germanium grains are removed.
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申请公布号 |
US2002106857(A1) |
申请公布日期 |
2002.08.08 |
申请号 |
US20010777445 |
申请日期 |
2001.02.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JAMMY RAJARAO;MCSTAY IRENE;PARK BYEONGJU;RAMACHANDRAN RAVIKUMAR;SHEPARD JOSEPH F.;TEWS HELMUT |
分类号 |
H01L21/8242;(IPC1-7):H01L21/824;H01L21/20 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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