| 摘要 |
<p>The invention relates to a method for producing an X-ray detector for imaging. By increasing the epitaxial layers, a GaAs material (1) is placed on a substrate n?+ (or p+¿) (2). p?+ (or n+) ¿ions are then implanted on the external face (11) of the material (1) in order to form a p+/ i/n+ structure after annealing. Ohmic contacts (12) are subsequently disposed on the two faces and individual detectors (pixels) (13) are produced over the entire surface using means of dry or chemical masking and pickling. The epitaxial material (1) has a thickness d' that is sufficient to absorb effectively the X photons and means can be used to reduce the residual doping of said material (1). The material obtained in this way is suitable for medical (mammography, dental, etc.) and industrial imaging.</p> |
