| 摘要 |
<p>A method of forming dual gate structures on first (40) and second portions (42) of a substrate (38) includes: providing an insulative layer (52) over the substrate (38); providing a first layer of material (54) having a first work function over the first portion (40) of the substrate (38); providing a second layer of material (62) having a second work function different than the first work function over the second portion (42) of the substrate (38); patterning a third layer of material (70) over the first (54) and second layers (62) of material, whereby features of the third layer of material (70) are provided over both the first and second portions (40, 42) of the substrate (38); providing a self-assembled molecular layer (76) over at least a portion of the features, wherein the self-assembled molecular layer (76) has regions of etch selectivity (78, 80); and etching the self-assembled molecular layer (76) at the regions of etch selectivity (78, 80) until gate structures (22, 24) are formed over the first (40) and second portions (42) of the substrate (38).</p> |
