发明名称 Distributed reverse surge guard
摘要 A diode (20), having first and second conductive layers (24,26), a conductive pad (28), and a distributed reverse surge guard (22), provides increased protection from reverse current surges. The surge guard (22) includes an outer loop (42) of P+-type surge guard material and an inner grid (44) of linear sections (46, 48) which form a plurality of inner loops extending inside the outer loop (42). The surge guard (22) distributes any reverse current over the area of the conductive pad (28) to provide increased protection from transient threats such as electrostatic discharge (ESD) and during electrical testing.
申请公布号 US2002105044(A1) 申请公布日期 2002.08.08
申请号 US20020096203 申请日期 2002.03.11
申请人 BUCHANAN WALTER R.;HAMERSKI ROMAN J.;SMITH WAYNE A. 发明人 BUCHANAN WALTER R.;HAMERSKI ROMAN J.;SMITH WAYNE A.
分类号 H01L29/06;H01L29/872;(IPC1-7):H01L31/00 主分类号 H01L29/06
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