发明名称 |
3-5 Group compound semiconductor and light emitting device |
摘要 |
Provide is a 3-5 group compound semiconductor having a concentration of a p-type dopant of 1x1017 cm- or more and 1x1021 cm-3 or less, which can be laminated to control the carrier concentration of an InGaAlN-type mixed crystal in a low range with high reproducibility. Also provided is a 3-5 group compound semiconductor in which the carrier concentration of an InGaAlN-type mixed crystal is controlled in a low range with high reproducibility, and a light emitting device having high light emitting efficiency.
|
申请公布号 |
US2002105013(A1) |
申请公布日期 |
2002.08.08 |
申请号 |
US20010987660 |
申请日期 |
2001.11.15 |
申请人 |
IYECHIKA YASUSHI;TSUCHIDA YOSHIHIKO;KURITA YASUYUKI |
发明人 |
IYECHIKA YASUSHI;TSUCHIDA YOSHIHIKO;KURITA YASUYUKI |
分类号 |
H01L21/205;H01L33/06;H01L33/32;H01S5/323;(IPC1-7):H01L31/033 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|