| 摘要 |
<p>Disclosed is a TFT (thin film transistor) type fingerprint acquisition device, which has a light shield layer on a light sensing part except a light receiving surface, so as to reduce incident range of light reflected from the fingerprint. The light sensing part of the present invention comprises a light receiving surface for receiving light reflected from the fingerprint; a drain and source electrodes which are respectively connected to both ends of the light receiving layer; an insulation layer which is formed on the drain and source electrodes; a light shield layer which is formed on the insulation layer while disclosing the light receiving layer.</p> |
