| 摘要 |
A dielectric element capable of attaining excellent element characteristics by suppressing an oxide dielectric film from deterioration of characteristics caused by hydrogen is obtained. This dielectric element comprises a lower electrode including a first conductor film containing a metal, silicon and nitrogen, a first insulator film including the oxide dielectric film and an upper electrode including a second conductor film containing the metal, silicon and nitrogen, while the metal includes at least one metal selected from a group consisting of Ir, Pt, Ru, Re, Ni, Co and Mo. According to this structure, the first conductor film and the second conductor film function as barrier films preventing diffusion of hydrogen. Consequently, the first conductor film and the second conductor film suppress hydrogen from diffusing into the oxide dielectric film. Thus, the oxide dielectric film is prevented from deterioration of characteristics.
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