发明名称 |
SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same |
摘要 |
A silicon-on-insulator (SOI) integrated circuit and a method of fabricating the SOI integrated circuit are provided. A plurality of transistor active regions and at least one body contact active region are formed on an SOI substrate. A semiconductor residue layer, which is thinner than the transistor active regions and the body contact active region, is disposed between the transistor active regions and the body contact active region. The transistor active regions, the body contact active region and the semiconductor residue layer are disposed on a buried insulating layer of the SOI substrate. The semiconductor residue layer is covered with a partial trench isolation layer. A bar-shaped full trench isolation layer is interposed between the adjacent transistor active regions. The full trench isolation layer is in contact with sidewalls of the transistor active regions adjacent thereto and is in contact with the buried insulating layer between the adjacent transistor active regions. An insulated gate pattern crosses over the respective transistor active regions. The insulated gate pattern is disposed to be parallel with the full trench isolation layer.
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申请公布号 |
US2002105032(A1) |
申请公布日期 |
2002.08.08 |
申请号 |
US20010872429 |
申请日期 |
2001.06.01 |
申请人 |
SAMSUNG ELECRONICS CO., LTD. |
发明人 |
LEE SOO-CHEOL;LEE TAE-JUNG |
分类号 |
H01L27/08;H01L21/336;H01L21/76;H01L21/8238;H01L27/092;H01L27/12;H01L29/786;(IPC1-7):H01L27/01;H01L31/039 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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