| 摘要 |
A semiconductor device and a fabrication method therefor, which are improved to prevent a decrease in concentration in an SOI active layer and a parasitic MOSFET from being formed even when a Mesa type isolation technique or an STI isolation method is applied to the formation of a MOSFET in an SOI layer. In an element isolation process for forming by isolating a plurality of element areas, a semiconductor layer (SOI layer) is removed by etching from an element isolation area with a laminated film of a nitride film (Si3N4) and an oxide film (SiO2) as an element isolation mask. Next, an SiON film (7) is formed on the side wall surface of the SOI layer (3) by nitriding/oxidizing, then an STI method is used to isolate an element, and finally an oxide film (9) and an electrode (10) are formed to complete a MOSFET.
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