发明名称 Low power, charge injection compensated charge pump
摘要 <p>A charge pump includes at least one switching transistor (Ms1,Ms2) for switching current on or off in response to an up or down signal, a pair of transistors (Md1,Md2,Md3,Md4) (one coupled to the source and the other to the drain of the switching transistor) each having its source and drain shorted and coupled to receive a complement of the signal on the gate terminal of the switching transistor on their gate terminals, and a fourth transistor (Mx,My) coupled to the drain of the switching transistor and a power supply (Gnd). The pair of transistors are activated concurrent with the deactivation of the switching transistor. The fourth transistor (Mx,My) may provide for active shutoff of a current transistor being switched by the switching transistor, by actively charging the source of the current transistor to a voltage which is not exceeded by the gate terminal of the current transistor. &lt;IMAGE&gt;</p>
申请公布号 EP1229656(A2) 申请公布日期 2002.08.07
申请号 EP20020250649 申请日期 2002.01.30
申请人 BROADCOM CORPORATION 发明人 INGINO, JOSEPH M.
分类号 G05F3/26;G05F3/30;H03K3/03;H03K17/22;H03L7/089;H03L7/093;H03L7/099;H03L7/18;(IPC1-7):H03L7/089 主分类号 G05F3/26
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