发明名称 |
Silicon-based film, formation method therefor and photovoltaic element |
摘要 |
<p>A silicon-based film of excellent photoelectric characteristics can be obtained by introducing a source gas containing silicon halide and hydrogen into the interior of a vacuum vessel, at least a part of the interior being covered with a silicon-containing solid, generating plasma in the space of the interior of the vacuum vessel, and forming a silicon-based film on a substrate provided in the interior of the vacuum vessel.</p> |
申请公布号 |
EP1229574(A2) |
申请公布日期 |
2002.08.07 |
申请号 |
EP20020002368 |
申请日期 |
2002.01.31 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KONDO, TAKAHARU;SANO, MASAFUMI;MATSUDA, KOICHI;HIGASHIKAWA, MAKOTO |
分类号 |
H01L21/205;C23C16/24;C23C16/44;H01L31/02;H01L31/0224;H01L31/18;H01L31/20;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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