Correlated charge transfer device and a method of fabricating a correlated charge transfer device

摘要

A single-electron transistor (1) has a point-contact channel (2) and side gates (5) formed in a granular layer (6). The granular layer is fabricated by depositing a nanocrystalline silicon layer (6') using plasma-enhanced chemical vapour deposition (PECVD), carrying out oxidation in dry oxygen at 750 DEG C and performing an anneal in argon at 1000 DEG C. The granular layer comprises crystalline conductive regions (9) and amorphous insulating regions (10), wherein the amorphous region forms a tunnel barrier with a height greater than 100 meV. The single-electron transistor exhibits Coulomb blockade at room temperature. <IMAGE>