CAPACITOR ELEMENT AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a semiconductor device having a ferroelectric capacitor element with its direction of applied electric field and polarization axis being in parallel each other and a method of manufacturing the same. CONSTITUTION: A capacitor element comprises: a memory cell transistor formed on a semiconductor wafer 10 insulation films 22 and 30 covering over the memory cell transistor a buffer body 40 formed on the insulation film 30 a lower electrode 42 formed on the buffer body 40 and electrically connected to a source/ drain diffusion zone 20 a capacitor dielectric film 44 formed on the lower electrode 42, having thermal expansion coefficient smaller than that of the buffer body 40, and comprising perovskite ferroelectric material with its crystal oriented vertically in effect to the plane of the lower electrode 42 and an upper electrode 46 formed on the capacitor dielectric film 44.