发明名称 Thin-film semiconductor device and method of manufacturing the same
摘要 A thin-film semiconductor device with a reduced influence on a device formation layer in separation and a method of manufacturing the device are provided. The manufacturing method includes the step of preparing a member having a semiconductor film with a semiconductor element and/or semiconductor integrated circuit on a separation layer, the separation step of separating the member at the separation layer by a pressure of a fluid, and the chip forming step of, after the separation step, forming the semiconductor film into chips. <IMAGE> <IMAGE> <IMAGE> <IMAGE>
申请公布号 EP1229582(A2) 申请公布日期 2002.08.07
申请号 EP20020002259 申请日期 2002.01.30
申请人 CANON KABUSHIKI KAISHA 发明人 YONEHARA, TAKAO;SAKAGUCHI, KIYOFUMI
分类号 H01L21/322;H01L21/02;H01L21/301;H01L21/3063;H01L21/68;H01L21/762;H01L21/78;H01L21/98;H01L23/538;H01L25/065;H01L27/01;H01L27/12 主分类号 H01L21/322
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