| 发明名称 |
process of manufacturing an integrated semiconductor circuit device |
| 摘要 |
<p>An integrated semiconductor circuit device comprising a diode bridge circuit formed of a Schottky barrier diode and a periphery circuit formed of a MOS transistor which are formed on a single silicon substrate, wherein a Schottky barrier, which is a component of the Schottky barrier diode, is made of a silicide layer. <IMAGE></p> |
| 申请公布号 |
EP1229491(A1) |
申请公布日期 |
2002.08.07 |
| 申请号 |
EP20020001912 |
申请日期 |
2002.01.31 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MATSUMOTO, HIRONORI;OHMI, TOSHINORI |
| 分类号 |
H01L21/28;H01L21/822;H01L21/8238;H01L27/04;H01L27/06;H01L27/092;H01L29/47;H01L29/872;(IPC1-7):G06K19/07 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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