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发明名称
Vertical transistor memory arrangement and method for fabricating a vertical transistor
摘要
申请公布号
GB0214803(D0)
申请公布日期
2002.08.07
申请号
GB20020014803
申请日期
2002.06.26
申请人
INFINEON TECHNOLOGIES AG
发明人
分类号
H01L21/28;H01L21/336;H01L27/115;H01L29/78;H01L29/792
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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