| 摘要 |
PURPOSE: A TFT(Thin Film Transistor) fabricating method for an LCD(Liquid Crystal Display) is provided to improve the aperture ratio by obtaining an equal amount of maintenance capacity by reducing a thickness of a protection film forming a maintenance capacity between gate lines and pixel electrodes even when reducing overlapping areas between the gate lines and the pixel electrodes. CONSTITUTION: A TFT fabricating method for an LCD includes the steps of forming a gate wire including gate lines(21) and gate electrodes(22) on an insulating substrate, forming a gate insulating film, forming a semiconductor layer, forming a data wire including data lines(61), source electrodes(62) and drain electrodes(63), carrying out vapor deposition of a protection film, forming first contact hole(72) in the protection film for exposing the drain electrodes, and forming pixel electrodes(80) overlapping the gate lines, wherein the first contact holes are formed by removing the protection film on the gate lines by a predetermined thickness.
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