发明名称 |
SILICON WAFER, SILICON EPITAXIAL WAFER, ANNEAL WAFER AND METHOD FOR PRODUCING THEM |
摘要 |
<p>The present invention relates to a method for producing a silicon single crystal pulled while doping with carbon and nitrogen and controlling to have an N-region over an entire plane of the crystal, and a silicon wafer doped with carbon and nitrogen and having an N-region over an entire plane. From this develops a growth technique of a silicon single crystal possible to grow a single crystal having few grown-in defects and high IG ability at a high growing rate, and there are provided a silicon wafer having an N-region over an entire plane of the crystal and high IG ability, an epitaxial wafer and an annealed wafer having excellent crystallinity and IG ability.</p> |
申请公布号 |
EP1229155(A1) |
申请公布日期 |
2002.08.07 |
申请号 |
EP20010919881 |
申请日期 |
2001.04.10 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
IIDA, MAKOTO;KIMURA, MASANORI |
分类号 |
C30B15/00;H01L21/322;(IPC1-7):C30B29/06;H01L21/205;H01L21/20 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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