发明名称 Interface device and system
摘要 <p>In an interface device in which by means of a buried insulation film 412 and a region insulation portion 410 an SOI substrate 414 is divided into a semiconductor support substrate region 411, a controller side region 407 and a network side region 408 and'a part of isolator circuits 405 and 406 making use of a static capacitance are formed in the network side region 408, the semiconductor support substrate region 411 and the network side region 408 are connected to a network power source to always keep these regions at a same potential, thereby, an interface device using a dielectric isolation substrate which suppresses erroneous operations due to noises and characteristic deterioration, and a system using the same are provided. <IMAGE></p>
申请公布号 EP1229586(A2) 申请公布日期 2002.08.07
申请号 EP20010119770 申请日期 2001.08.28
申请人 HITACHI, LTD. 发明人 KIKUCHI, MUTSUMI;MURABAYASHI, FUMIO;SASE, TAKASHI;WATANABE, ATSUO;AMISHIRO, MASATSUGU
分类号 G06F3/00;G06F13/00;H01L21/76;H01L21/762;H01L21/822;H01L23/50;H01L27/04;H01L27/12;H04L25/02;(IPC1-7):H01L27/12 主分类号 G06F3/00
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