发明名称 |
Interface device and system |
摘要 |
<p>In an interface device in which by means of a buried insulation film 412 and a region insulation portion 410 an SOI substrate 414 is divided into a semiconductor support substrate region 411, a controller side region 407 and a network side region 408 and'a part of isolator circuits 405 and 406 making use of a static capacitance are formed in the network side region 408, the semiconductor support substrate region 411 and the network side region 408 are connected to a network power source to always keep these regions at a same potential, thereby, an interface device using a dielectric isolation substrate which suppresses erroneous operations due to noises and characteristic deterioration, and a system using the same are provided. <IMAGE></p> |
申请公布号 |
EP1229586(A2) |
申请公布日期 |
2002.08.07 |
申请号 |
EP20010119770 |
申请日期 |
2001.08.28 |
申请人 |
HITACHI, LTD. |
发明人 |
KIKUCHI, MUTSUMI;MURABAYASHI, FUMIO;SASE, TAKASHI;WATANABE, ATSUO;AMISHIRO, MASATSUGU |
分类号 |
G06F3/00;G06F13/00;H01L21/76;H01L21/762;H01L21/822;H01L23/50;H01L27/04;H01L27/12;H04L25/02;(IPC1-7):H01L27/12 |
主分类号 |
G06F3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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