Magnetostatic wave device

摘要

There is provided a magnetostatic wave device which operates even with a substitutional R,A:YIG having a small film thickness and which has a wider operational frequency band. A magnetostatic wave device comprising a magnetic garnet film is provided which is made of a material expressed by a general formula: (Y1-rRr)3(Fe1-aAa)5O12 where R is at least one kind selected from among La, Bi, Gd and Lu; A is at least one kind selected from among Al, Ga, In and Sc; r and a are within the ranges 0≤r≤1 and 0≤a < 1, respectively; and r and a can not be zero at the same time. Further, the crystal structure of said magnetic garnet film has superlattice.