SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided, which obtains a uniform sensing capability without regard to an arrangement position of sense amplifier circuits. CONSTITUTION: The semiconductor memory device includes arrays(100) arranged in columns and rows, and a sub word line decoder region(110) arranged between adjacent arrays in a row direction, and a bit line equalization and sense amplifier region(120) including a P type sense amplifier and an N type sense amplifier, and a conjunction region(130) arranged between adjacent sub word line decoder regions and between adjacent bit line equalization and sense amplifier regions. A main row decoder circuit selects arrays arranged in a row direction. And pull-up and pull-down transistors drive the corresponding P type sense amplifiers and N type sense amplifiers and are arranged in the conjunction region.