发明名称 Method of etching using hydrofluorocarbon compounds
摘要 A method of etching comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an etchant compound having the formula CXHCFZwherein:andand further including an etching composition which includes said etchant compound and a second material different from the etchant compound that enhances or modifies plasma etching.
申请公布号 US6428716(B1) 申请公布日期 2002.08.06
申请号 US20000569910 申请日期 2000.05.11
申请人 ALLIEDSIGNAL INC. 发明人 DEMMIN TIMOTHY R.;LULY MATTHEW H.;FATHIMULLA MOHAMMED A.
分类号 H01L21/302;H01L21/205;H01L21/3065;H01L21/311;(IPC1-7):G44C1/22;C03C15/00 主分类号 H01L21/302
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