发明名称 |
Method of etching using hydrofluorocarbon compounds |
摘要 |
A method of etching comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an etchant compound having the formula CXHCFZwherein:andand further including an etching composition which includes said etchant compound and a second material different from the etchant compound that enhances or modifies plasma etching.
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申请公布号 |
US6428716(B1) |
申请公布日期 |
2002.08.06 |
申请号 |
US20000569910 |
申请日期 |
2000.05.11 |
申请人 |
ALLIEDSIGNAL INC. |
发明人 |
DEMMIN TIMOTHY R.;LULY MATTHEW H.;FATHIMULLA MOHAMMED A. |
分类号 |
H01L21/302;H01L21/205;H01L21/3065;H01L21/311;(IPC1-7):G44C1/22;C03C15/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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