LASER MATERIAL

摘要

The invention pertains to quantum electronics and is useful for developi ng materials for laser techniques for use in solid state lasers with emitting wavelength of between 2.8 microns to 3.1 microns. The technical problem addressed by the invention is that of raising the gain of laser material, lowering the generation stimulation threshold, increasing th e generation efficiency and widening the available range of industrial generating systems with continuously variable emission wavelengths in the range 2.8 microns - 3.1 microns, including those operating in short-pulse generation and amplification modes. The invention is also aimed at preventing fissures forming in the crystal, reducing scattering, improving radiation durability, decreasing dissipation and reducing passive absorption in specific embodiments. The laser material has a garnet structure and contains between 0.025 formu la units (f.u.) and 2.95 f.u. of holmium and in addition at least one of the following elements: Li, Be, B, Na, Ca, Mg, Si, K, Ti, V, Mn, Fe, Co, Ni, Cu, Zn, Ge, R b, Sr, Zr, Nb, Mo, W, Ta, Hf, Bi in quantities of between 1 x 10 17 cm-3 to 5x10 20 CM- 3. 12