MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent flying of aluminum residue and the shorting of a circuit, by making polysilicon remain at the edge of a dicing line at the time of a gate processing. CONSTITUTION:An oxide film 2 for isolating a diffused region is formed on a silicon substrate 1. Then a resist pattern 6a is formed so that polysilicon, which is used in forming a gate, is made to remain from a thick oxide film part 2 to a dicing line part. The polysilicon 3 is selectively removed. A PSG film 4 is grown by a CVD method. The PSG film is selectively removed with a resist mask 6b so that the step part between the polysilicon 3 and the silicon substrate 1 becomes smooth and the edge of the PSG film 4a a part, which is separated from the edge of the dicing line part by a distance 7. Thereafter, the resist mask 6b is removed, and an aluminum film 5 is grown by a sputtering method. The aluminum film is selectively removed by using a resist mask 6c so that the polysilicon 3 and the aluminum 5 are not shorted and allowance of a distance 8 is provided from a PSG film 4a. Therefore, the aluminum does not remain when aluminum undergoes anisotropic etching.