Structure and process for multi-chip chip attach with reduced risk of electrostatic discharge damage

摘要

A technique for fabricating precision aligned macros (PAMs) with reduced risk of electrostatic discharge damage and thermal damage. An electrical and thermal contact is provided through the back of the individual chips to a supporting silicon substrate. A conductive seed layer for electroplating is formed on a support substrate. A dielectric (preferably, a thermid) layer is formed on the seed layer. Vias are formed in the thermid layer and metal contacts are formed in the vias. The front faces of two or more chips are bonded onto the top surface of an alignment substrate, and the chips are aligned to the alignment substrate. The back faces of the chips are bonded to the metal contacts and thermid layer with heat and pressure. The alignment substrate is removed. The front faces of the chips are planarized. Finally, interconnect wiring is formed over the chips and thermid layer.