发明名称 Output driver circuit using thin and thick gate oxides
摘要 An output driver on an integrated circuit (IC) includes at least one transistor that has a thicker gate oxide than other standard transistors in the IC. In one embodiment, the output driver includes two pull-up transistors. A first pull-up transistor has a thicker gate oxide than standard transistors on the IC to provide a wide range of output voltages on the pad. A second pull-up transistor has a standard, i.e. thin, gate oxide thickness to ensure a fast low-to-high voltage transition on the pad. The other transistors in the output driver have standard gate oxide thicknesses. Illustrative thicknesses include 150 Angstroms for the first pull-up transistor and 50 Angstroms for the second pull-up transistor.
申请公布号 US6429686(B1) 申请公布日期 2002.08.06
申请号 US20000595779 申请日期 2000.06.16
申请人 XILINX, INC. 发明人 NGUYEN HY V.
分类号 H03K19/003;(IPC1-7):H03K19/003 主分类号 H03K19/003
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