发明名称 |
Method for manufacturing a gate of thin film transistor in a liquid crystal display device |
摘要 |
A method and structure for reducing the resistivity of a repair line in an active panel includes a repair line made of a gate material and a method for manufacturing the same. All parts of the repair line comprise low resistivity metal such as aluminum or copper so that a detoured data signal is not delayed.
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申请公布号 |
US6429908(B1) |
申请公布日期 |
2002.08.06 |
申请号 |
US19980146460 |
申请日期 |
1998.08.19 |
申请人 |
LG PHILIPS LCD CO., LTD. |
发明人 |
LIM BYOUNG HO |
分类号 |
H01L29/786;G02F1/13;G02F1/1362;(IPC1-7):G02F1/133 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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