发明名称 |
Method of fabricating a slot dual damascene structure without middle stop layer |
摘要 |
An interconnect structure and method of forming the same in which a diffusion barrier/etch stop layer is deposited over a conductive layer. An organic low k dielectric material is deposited over the diffusin barrier/etch stop layer to form a first dielectric layer. The first dielectric layer is etched to form a slot via in the first dielectric layer. An inorganic low k dielectric material is deposited within the slot via and over the first dielectric layer to form a second dielectric layer over the slot via and the first dielectric layer. The re-filled via is simultaneously etched with the second dielectric layer in which a trench is formed. The trench extends in a direction that is normal to the length of the slot via. The entire width of the trench is directly over the via. The re-opened via and the trench are filled with a conductive material.
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申请公布号 |
US6429116(B1) |
申请公布日期 |
2002.08.06 |
申请号 |
US20010778064 |
申请日期 |
2001.02.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG FEI;OKADA LYNNE A.;SUBRAMANIAN RAMKUMAR;GABRIEL CALVIN T. |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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