Method of manufacturing a semiconductor device with improved line width accuracy

摘要

An oxide hard mask is formed during semiconductor device manufacturing between a deep ultraviolet photoresist and an anti-reflective coating to prevent interactions with the photoresist, thereby preventing reduction of a critical dimension of a patterned conductive layer. Embodiments include a method of manufacturing a semiconductor device comprising depositing a substantially nitrogen free oxide layer on the anti-reflective coating, such as a silicon oxide derived from tertaethyl orthosilicate by plasma enhanced chemical vapor deposition.