| 摘要 |
A heterojunction field effect transistor has a buffer layer, a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode to be in contact with a substrate. The buffer layer has at least one GaN layer. The channel layer has a composition of InzGa1-zN (0<=z<1) and the gate insulating layer is an InAlGaN layer. The source and drain electrodes are in ohmic contact with the channel layer and the gate electrode and the gate insulating layer are in Schottky contact with each other.
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