发明名称 Solid state thermal switch
摘要 A solid state thermal switch providing thermal conductivity in an ON state and enhanced thermal isolation in an OFF state. The thermal switch is manufactured on a substrate by forming an oxide layer under a thin semiconducting layer. The thin semiconducting layer can be made from silicon or a silicon geranium lattice structure. The thin silicon layer is cracked by a neutron bombardment process. A drain and a source are then doped into the thin silicon layer. Cracks in the thin silicon layer disrupt quiescent thermal conductivity in the electron transport layer between the drain and source when the solid state thermal switch is in the OFF state. The thin semiconducting layer transports electrons and heat when the solid state thermal switch is in the ON state. The cracks created in the silicon layer provide thermal isolation from the drain to the source when the thermal switch is in an OFF state and allow heat conduction when the solid state thermal device is in the ON state.
申请公布号 US6429137(B1) 申请公布日期 2002.08.06
申请号 US20000479097 申请日期 2000.01.07
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 GHOSHAL UTTAM SHYAMALINDU
分类号 F25B21/02;H01L21/263;H01L21/336;H01L35/30;H01L49/00;(IPC1-7):H01L21/302 主分类号 F25B21/02
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