发明名称 Semiconductor device capable of generating a plurality of voltages
摘要 Output nodes (Noutn, Noutp) outputting a negative potential (VN) and a positive potential (VPS) respectively are supplied with fixed potentials by reset circuits respectively when unused. Switches (SW2, SW3) conduct when generating the negative potential, while switches (SW1, SW4) conduct when generating the positive potential. Reference potentials for the generated potentials are supplied to internal nodes N10, N20) through the switches (SW1, SW3) respectively. Poly-diode elements are employed for a voltage generation part, whereby a charge pump circuit capable of generating positive and negative voltages can be implemented without remarkably changing a fabrication method.
申请公布号 US6429724(B1) 申请公布日期 2002.08.06
申请号 US20000699370 申请日期 2000.10.31
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OGURA TAKU;MIHARA MASAAKI
分类号 H02M3/07;(IPC1-7):G05F1/10 主分类号 H02M3/07
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