发明名称 |
In-situ photoresist removal by an attachable chamber with light source |
摘要 |
A method of fabricating integrated circuit wafers, in accordance with this invention comprises the following steps. Provide an integrated circuit wafer having devices formed therein covered with a metal layer and a photoresist layer over the metal layer which is selectively exposed and developed forming a photoresist mask. Introduce the wafer into a multi-chamber system, patterning the metal layer by etching and then exposing the mask to light in a cooled chamber wherein the light is derived from a source selected from a mercury lamp and a laser filtered to remove red and infrared light therefrom before exposure of the wafer thereto. The chamber is cooled by a refrigerant selected from water and liquefied gas. Then remove the wafer, and load it into a photoresist stripping tank to remove the photoresist mask with a wet photoresist stripper. Place the wafer in a batch type plasma chamber after removing the photoresist mask. Establish a plasma discharge in the batch type plasma chamber for a first time while flowing oxygen gas through the batch type plasma chamber. Terminate the plasma discharge, and then remove the wafer from the batch type plasma chamber.
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申请公布号 |
US6429142(B1) |
申请公布日期 |
2002.08.06 |
申请号 |
US19990256270 |
申请日期 |
1999.02.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
PENG CHIANG JEN;CHEN DIAN HAU |
分类号 |
C23F1/00;H01L21/00;H01L21/02;H01L21/302;H01L21/306;H01L21/31;H01L21/311;H01L21/3213;H01L21/461;H01L21/469;(IPC1-7):H01L21/302 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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