发明名称 |
Method to enhance the formation of nucleation sites on silicon structures and an improved silicon structure |
摘要 |
A method to enhance the formation of nucleation sites on at least one narrow silicon structure comprises the step: forming at least one nucleation region (206/208): masking the at least one narrow silicon structure (202) with a mask (302); treating the at least one nucleation region (206/208) to enhance an ability of said region to form C54 nucleation sites; and removing the mask from the at least one narrow silicon structure (202). In another embodiment, a silicon device capable of undergoing a phase transformation comprises at least one narrow silicon structure (202) formed of TiSi2; and at least one nucleation region (206/208) attached to the at least one narrow silicon region (202), said at least one nucleation region (206/208) having a width which is greater than a width of said at least one narrow silicon structure (202) and said at least one nucleation region (206/208) capable of generating a high density of C54 nucleation sites such that said high density of nucleation sites causes a phase transformation (502a/502b) to propagate along the at least one silicon structure (202).
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申请公布号 |
US6429455(B1) |
申请公布日期 |
2002.08.06 |
申请号 |
US19990397462 |
申请日期 |
1999.09.16 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MCNEIL VINCENT MAURICE;KITTL JORGE ADRIAN |
分类号 |
H01L21/28;H01L21/3205;H01L21/336;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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