发明名称 |
Method for forming a calibation standard to adjust a micro-bar of an electron microscope |
摘要 |
The invention relates to a method for adjusting a micro-bar of an electron microscope to increase the accuracy of the micro-bar. The method entails first forming a photo-resist layer on a semiconductor wafer, and exposing a predetermined region of the photo-resist layer to a light of a specific wavelength. Then, a resist stripping process is performed to remove the photo-resist layer in the predetermined region. The periphery of the predetermined region of the photo-resist layer will form a vertical side wall with a periodic wave shape similar to a sine wave, and the wavelength of the periodic wave shape is determined by the wavelength of the light and the refraction rate of the photo-resist layer. Finally, the micro-bar of the electron microscope is adjusted using the wavelength of the periodic wave shape on the vertical side wall.
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申请公布号 |
US6429425(B1) |
申请公布日期 |
2002.08.06 |
申请号 |
US19990340402 |
申请日期 |
1999.06.28 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIN CHIH-YUNG;HWANG JIUNN-REN |
分类号 |
H01L21/66;G01B3/00;G01B3/30;G01B15/00;G03F7/00;H01J37/20;H01J37/28;(IPC1-7):G12B13/00;G01B21/30 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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