发明名称 Method for forming a calibation standard to adjust a micro-bar of an electron microscope
摘要 The invention relates to a method for adjusting a micro-bar of an electron microscope to increase the accuracy of the micro-bar. The method entails first forming a photo-resist layer on a semiconductor wafer, and exposing a predetermined region of the photo-resist layer to a light of a specific wavelength. Then, a resist stripping process is performed to remove the photo-resist layer in the predetermined region. The periphery of the predetermined region of the photo-resist layer will form a vertical side wall with a periodic wave shape similar to a sine wave, and the wavelength of the periodic wave shape is determined by the wavelength of the light and the refraction rate of the photo-resist layer. Finally, the micro-bar of the electron microscope is adjusted using the wavelength of the periodic wave shape on the vertical side wall.
申请公布号 US6429425(B1) 申请公布日期 2002.08.06
申请号 US19990340402 申请日期 1999.06.28
申请人 UNITED MICROELECTRONICS CORP. 发明人 LIN CHIH-YUNG;HWANG JIUNN-REN
分类号 H01L21/66;G01B3/00;G01B3/30;G01B15/00;G03F7/00;H01J37/20;H01J37/28;(IPC1-7):G12B13/00;G01B21/30 主分类号 H01L21/66
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