Semiconductor device and manufacturing method thereof

摘要

Provided is a semiconductor device with a silicide protection structure that prevents the over-etching of a source/drain layer in forming a contact hole and prevents a voltage drop in surge voltage without increasing the area of the source/drain layer, as well as a manufacturing method of the device. There is defined an active region (AR) of an MOS transistor and a gate electrode (10) that constitutes a field-shield isolation structure formed in a rectangular loop shape. Over the FS gate electrode (10) and the active region (AR), a gate electrode (20) of the MOS transistor is formed so as to divide the FS gate electrode (10) in two. Each of the active regions (AR) facing each other across the gate electrode (20) has a silicide protection structure (PS1), whose surrounding is an S/D layer (30), and a silicide film (SF1) is formed over the structure (PS1).