Method of manufacturing a field-effect transistor substantially consisting of organic materials

摘要

A practical method of manufacturing an organic field-effect transistor is disclosed. By applying the insulating layer, preferably having a thickness of 0.3 mum or less to a substantially planar electrode layer, an organic field-effect transistor can be made having a channel length down to 2 mum, satisfying the condition for voltage amplification at voltages well below 10 V, and having an on/off ratio of about 25.