| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to form epitaxial electrode films and a dielectric film without considering torelable temperatures of transistors by a method wherein a flat thin film capacitor is epitaxially grown on the first main surface of a thin film silicon layer and the switching transistors are formed on the second main surface, which opposes the first main surface, of the silicon layer. SOLUTION: A thin film capacitor 41, which is constituted of a first electrode 4, a dielectric film 5 and a second electrode 6 and is formed by an epitaxial growth, is formed on the side of the first main surface of a thin film silicon layer 31 formed of a P-type Si (100) substrate. The capacitor 41 is formed as an evenly continued plane on the side of the first main surface of the layer 31, which is formed with adjacent two memory cells. Two switching transistors 91a and 91b are formed on the side of the second main surface, which opposes to the side of this first main surface, of the layer 31. The transistor 91a is formed of an N<+> source region 44a, an n<+> drain region 45, a gate oxide film 46 and a gate electrode 47. |
