发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL ELECTROOPTICAL DEVICE |
摘要 |
PURPOSE: To obtain a crystallization silicon film which is formed on a glass substrate and has a uniform crystallizability within a substrate surface and to flatten the substrate. CONSTITUTION: When applying line-shaped laser beams to an amorphous silicon film formed on a glass substrate during scanning, the glass substrate is installed so that a projecting curved surface is exposed and line-shaped laser beams with a focus distribution in inverse U shape nearly corresponding to the projecting curved surface in heated state are applied during scanning before gradual cooling.
|
申请公布号 |
KR100349021(B1) |
申请公布日期 |
2002.08.03 |
申请号 |
KR19990009130 |
申请日期 |
1999.03.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY K.K. |
发明人 |
YAMAZAKI SHUNPEI;TANAKA KOICHIRO |
分类号 |
G02F1/136;G02F1/1368;G03F7/20;H01L21/02;H01L21/20;H01L21/268;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|