发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL ELECTROOPTICAL DEVICE
摘要 PURPOSE: To obtain a crystallization silicon film which is formed on a glass substrate and has a uniform crystallizability within a substrate surface and to flatten the substrate. CONSTITUTION: When applying line-shaped laser beams to an amorphous silicon film formed on a glass substrate during scanning, the glass substrate is installed so that a projecting curved surface is exposed and line-shaped laser beams with a focus distribution in inverse U shape nearly corresponding to the projecting curved surface in heated state are applied during scanning before gradual cooling.
申请公布号 KR100349021(B1) 申请公布日期 2002.08.03
申请号 KR19990009130 申请日期 1999.03.18
申请人 SEMICONDUCTOR ENERGY LABORATORY K.K. 发明人 YAMAZAKI SHUNPEI;TANAKA KOICHIRO
分类号 G02F1/136;G02F1/1368;G03F7/20;H01L21/02;H01L21/20;H01L21/268;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L21/20 主分类号 G02F1/136
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