| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting diode which enables the upper face and the side face of a semiconductor chip to be made uneven and a thin film to be formed on the uneven faces, without the need for protecting electrode, improving the light extraction efficiency, and uses a p-type region as an upper face, and also to provide a method of manufacturing the same. SOLUTION: The light-emitting diode comprises a pn junction, having the p-type region 13 formed on the upper side. By forming unevenness 17 and a thin film 18 on the upper face and the side face of the semiconductor chip, the light-emitting diode, having high external light extraction efficiency, can be manufactured. |
